ROHM Semiconductor D2114K Даташит, D2114K PDF, даташитов

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D2114K Даташит - ROHM Semiconductor

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D2114K

Компоненты Описание

High-current Gain Medium Power Transistor (20V, 0.5A)

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1996

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5 Pages

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75.7 kB

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ROHM Semiconductor

Features
1) High DC current gain.
   hFE = 1200 (Typ.)
2) High emitter-base voltage.
   VEBO =12V (Min.)
3) Low VCE (sat).
   VCE (sat) = 0.18V (Typ.)
   (IC / IB = 500mA / 20mA)

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Компоненты Описание

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