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D1706 Даташит - Inchange Semiconductor

2SD1706 image

Номер в каталоге
D1706

Компоненты Описание

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page
2 Pages

File Size
81.4 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
·Collector-Emitter Breakdown Voltage-: V(BR)CEO= 80V(Min)
·Good Linearity of hFE
·Low Collector Saturation Voltage-: VCE(sat)= 0.5V(Max.)@ IC= 7A
·Complement to Type 2SB1155


APPLICATIONS
·Designed for power switching applications

Page Link's: 1  2 

Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Power Transistor
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Silicon NPN Power Transistor ( Rev : V2 )
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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