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D1407A Даташит - Toshiba

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D1407A

Компоненты Описание

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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1997

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4 Pages

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123 kB

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Toshiba

Power Amplifier Applications

• High breakdown voltage: VCEO = 100 V
• Low collector saturation voltage: VCE (sat) = 2.0 V (max)
• Complementary to 2SB1016A

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Компоненты Описание

PDF

производитель

2SC5242

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )

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2SC5354

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )

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2SC5358

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2013 )

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2SC5359

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2006 )

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2SC5459

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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2SC5460

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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2SC5465

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2005 )

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2SC5548A

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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Toshiba

2SC5549

TOSHIBA Transistor Silicon NPN Triple Diffused Type ( Rev : 2004 )

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Toshiba

2SC5550

TOSHIBA Transistor Silicon NPN Triple Diffused Type

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Toshiba

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