General Description [1]
The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64K × 4 bits that supports an asynchronous memory interface. The device features an automatic power-down feature that significantly reduces power consumption when deselected.
See the Truth Table in this data sheet for a complete description of read and write modes.
The CY7C194BN is available in 24 DIP, 24 SOJ package(s).

FEATUREs
• Fast access time: 15 ns and 25 ns
• Wide voltage range: 5.0V ± 10% (4.5V to 5.5V)
• CMOS for optimum speed/power
• TTL-compatible inputs and outputs
• CY7C194BN is available in 24 DIP, 24 SOJ packages.