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CY7C1362C-166BGI Даташит - Cypress Semiconductor

CY7C1362C-166BGI image

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CY7C1362C-166BGI

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31 Pages

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510.6 kB

производитель
Cypress
Cypress Semiconductor Cypress

Functional Description[1]
The CY7C1360C/CY7C1362C SRAM integrates 256K x 36 and 512K x 18 SRAM cells with advanced synchronous peripheral circuitry and a two-bit counter for internal burst operation.


FEATUREs
• Supports bus operation up to 250 MHz
• Available speed grades are 250, 200, and 166 MHz
• Registered inputs and outputs for pipelined operation
• 3.3V core power supply (VDD)
• 2.5V/3.3V I/O operation (VDDQ)
• Fast clock-to-output times
    — 2.8 ns (for 250-MHz device)
• Provide high-performance 3-1-1-1 access rate
• User-selectable burst counter supporting Intel® Pentium® interleaved or linear burst sequences
• Separate processor and controller address strobes
• Synchronous self-timed writes
• Asynchronous output enable
• Single Cycle Chip Deselect
• Available in lead-free 100-Pin TQFP package, lead-free and non lead-free 119-Ball BGA package and 165-Ball FBGA package
• TQFP Available with 3-Chip Enable and 2-Chip Enable
• IEEE 1149.1 JTAG-Compatible Boundary Scan

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Номер в каталоге
Компоненты Описание
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производитель
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
Cypress Semiconductor
9-Mbit (256K x 36/512K x 18) Pipelined SRAM
Cypress Semiconductor
256K x 36/512K x 18 Pipelined SRAM
Cypress Semiconductor
256K x 36/512K x 18 Pipelined SRAM
Cypress Semiconductor
18-Mbit (512K x 36/1M x 18) Pipelined SRAM ( Rev : 2004 )
Cypress Semiconductor
256K x 36/256K x 32/512K x 18 Pipelined SRAM
Cypress Semiconductor
18-Mbit (512K x 36/1M x 18) Pipelined SRAM
Cypress Semiconductor
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
Cypress Semiconductor
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM ( Rev : 2006 )
Cypress Semiconductor
9-Mbit (256K x 36/512K x 18) Flow-Through SRAM
Cypress Semiconductor

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