Functional Description
The CY7C106BN and CY7C1006BN are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

FEATUREs
• High speed
   — tAA = 15 ns
• CMOS for optimum speed/power
• Low active power
   — 495 mW
• Low standby power
   — 275 mW
• 2.0V data retention (optional)
• Automatic power-down when deselected
• TTL-compatible inputs and outputs