Description
The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input registers, high speed SRAM and write buffer onto a single monolithic IC and features the delayed write system to reduce the dead cycles.

FEATUREs
• Fast cycle time (Cycle) (Frequency)
    CXK77B3610GB-6 6ns 166MHz
    CXK77B3610GB-7 7ns 142MHz
• Inputs and outputs are LVTTL/LVCMOS compatible
• Single 3.3V power supply: 3.3V ± 0.15V
• Byte-write possible
• OE asynchronization
• JTAG test circuit
• Package 119TBGA
• 3 kinds of synchronous operation mode
    Register-Register mode (R-R mode)
    Register-Flow Thru mode (R-F mode)
    Register-Latch mode (R-L mode)