Description
The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768-words by 8 bits.
A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability.
Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs).
And special feature are, low power consumption, high speed and broad package line-up.
The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up.

FEATUREs
• Single +3.3V supply: 3.3V ±0.3V
• Directly LVTTL compatible: All inputs and outputs
• Fast access time:          (Access time)
    CXK5V8257BTM/BYM/BM
                                 -70LL 70ns (Max.)
                               -10LL 100ns (Max.)
• Low standby current:
    CXK5V8257BTM/BYM/BM
                      -70LL/10LL 3.5µA (Max.)
• Low power data retention: 2.0V (Min.)
• Available in many packages
    CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package
    CXK5V8257BM 450mil 28 pin SOP Package

Function
    32768-word × 8 bit static RAM