CPD74 Даташит - Central Semiconductor
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CPD74
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Central Semiconductor
PROCESS DETAILS
Die Size 25 x 25 MILS
Die Thickness 6.0 MILS
Anode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS
Cathode 1, 2, 3, 4 Bonding Pad Area 3.5 x 4.0 MILS
Top Side Metalization Al - 12,000Å
Back Side Metalization Au - 5,000Å
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производитель
SURFACE MOUNT MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY
Central Semiconductor
SURFACE MOUNT SUPERmini™ MONOLITHIC, ISOLATED SILICON QUAD SWITCHING DIODE ARRAY ( Rev : 2003 )
Central Semiconductor
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