CPD69 Даташит - Central Semiconductor
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CPD69
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Central Semiconductor
General Purpose Rectifier
1 Amp Glass Passivated Rectifier Chip
PROCESS DETAILS
Process GLASS PASSIVATED MESA
Die Size 42.5 x 42.5 MILS
Die Thickness 12.5 MILS
Anode Bonding Pad Area 32 x 32 MILS
Top Side Metalization Ni/Au - 5,000Å/2,000Å
Back Side Metalization Ni/Au - 5,000Å/2,000Å
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Компоненты Описание
PDF
производитель
General Purpose Rectifier 1 Amp Glass Passivated Rectifier Chip ( Rev : 2003 )
Central Semiconductor
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