The CPD102X-CMPD6263 is a silicon epitaxial planar Schottky diode designed for switching applications requiring low forward voltage drop.
MECHANICAL SPECIFICATIONS:
Die Size 9.0 x 9.0 MILS
Die Thickness 5.9 MILS
Anode Bonding Pad Size 4.8 MILS DIAMETER
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 9,000Å
Scribe Alley Width 2.4 MILS
Wafer Diameter 5 INCHES
Gross Die Per Wafer 210,600