CPD04(2003) Даташит - Central Semiconductor
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CPD04
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2 Pages
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Central Semiconductor
PROCESS DETAILS
Process GLASS PASSIVATED MESA
Die Size 25 x 25 MILS
Die Thickness 9.5 MILS
Anode Bonding Pad Area 14.5 x 14.5 MILS
Top Side Metalization Au - 5,000Å
Back Side Metalization Au - 2,000Å
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производитель
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GLASS PASSIVATED GENERAL PURPOSE RECTIFIER ( Rev : 2019 )
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