CP704V Даташит - Central Semiconductor
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CP704V
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2 Pages
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производитель
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 22 x 22 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 3.7 x 3.7 MILS
Emitter Bonding Pad Area 4.2 x 4.2 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Номер в каталоге
Компоненты Описание
PDF
производитель
Small Signal Transistors PNP - High Current Transistor Chip ( Rev : 2005 )
Central Semiconductor
Small Signal Transistors PNP - High Current Transistor Chip ( Rev : 2005 )
Central Semiconductor
Small Signal Transistor PNP - High Current Transistor Chip ( Rev : 2010 )
Central Semiconductor
Small Signal Transistors NPN - High Current Transistor Chip ( Rev : 2005 )
Central Semiconductor
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