Small Signal Transistor
NPN - High Current Transistor Chip
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 40 x 40 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 7.9 x 8.7 MILS
Emitter Bonding Pad Area 9.0 x 14 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au-As - 13,000Å