General Description
Mimix Broadband’s distributed 2.0-22.0 GHz GaAs MMIC power amplifier has a small signal gain of 10.0 dB with a +30.0 dBm P1dB output compression point. This MMIC uses Mimix Broadband’s 0.3 µm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Test Instrumentation, Military, Space, Microwave Point-to-Point Radio, SATCOM and VSAT applications.

FEATUREs
♦ Ultra Wide Band Power Amplifier
♦ Compact Size/Self Bias Architecture
♦ Positive Gain Slope
♦ 10.0 dB Small Signal Gain
♦ +30.0 dBm P1dB Compression Point
♦ +39.0 dBm Third Order Intercept
♦ 100% Visual Inspection to MIL-STD-883 Method 2010