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CM1200E4C-34N Даташит - Mitsumi

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CM1200E4C-34N

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Mitsumi Mitsumi

4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules

● IC................................................................ 1200A
● VCES ....................................................... 1700V
● Insulated Type
● 1-element in a Pack (for brake)
● AISiC Baseplate
● Trench Gate IGBT : CSTBT™
● Soft Reverse Recovery Diode


APPLICATION
  Traction drives, DC choppers, Dynamic braking choppers

 

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HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsumi
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
MITSUBISHI ELECTRIC
HIGH POWER SWITCHING USE INSULATED TYPE
Mitsumi
HIGH POWER SWITCHING USE INSULATED TYPE ( Rev : 1998 )
MITSUBISHI ELECTRIC

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