NPN SILICON RF TRANSISTOR

• Ultra high frequency low noise transistor
• Silicon epitaxial bipolar process.
• High power gain, low noise figure,
• SOT-323 chip package, mainly used in VHF, UHF
• high frequency wideband low noise amplifier.

FEATURE
   High gain:︱S21e︱2 TYP. Value is 13.5dB @ VCE=5V，IC=20mA，f=0.9GHz
   Low noise: NF TYP. Value is 1.6dB @ VCE=5V，IC=5mA， f=0.9GHz
   fT (TYP.) : TYP. Value is 9GHz @ VCE=5V，IC=20mA，f=0.9GHz