C4093 Даташит - Renesas Electronics
Номер в каталоге
C4093
Компоненты Описание
Other PDF
no available.
PDF
page
9 Pages
File Size
145.5 kB
производитель
Renesas Electronics
DESCRIPTION
The 2SC4093 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band.
It has large dynamic range and good current characteristics, and is contained in a 4-pin minimold package which enables high-isolation gain.
FEATURES
• Low Noise
NF = 1.1 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High Power gain
|S21e|2 = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
• Maximum available power gain: MAG = 14.2 dB TYP.
@ VCE = 10 V, IC = 20 mA, f = 1 GHz
• 4-pin minimold Package
Номер в каталоге
Компоненты Описание
PDF
производитель
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
California Eastern Laboratories.
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
Renesas Electronics
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
California Eastern Laboratories.
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