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C3357 Даташит - NEC => Renesas Technology

2SC3357 image

Номер в каталоге
C3357

Компоненты Описание

Other PDF
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page
8 Pages

File Size
75.8 kB

производитель
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has large dynamic range and good current characteristic.


FEATURES
• Low Noise and High Gain
  NF = 1.1 dB TYP., Ga= 8.0 dB TYP. @VCE= 10 V, IC= 7 mA, f = 1.0 GHz
  NF = 1.8 dB TYP., Ga= 9.0 dB TYP. @VCE= 10 V, IC= 40 mA, f = 1.0 GHz
• Large PTin Small Package
  PT: 2 W with 16 cm2 × 0.7 mm Ceramic Substrate.


Номер в каталоге
Компоненты Описание
PDF
производитель
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
Renesas Electronics

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