High Speed Solid State Detectors for Fiber Optic and Very Low Light-Level Applications

Description
PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused "reach through" structure. This structure provides high responsivity between 400 and 1000 nm as well as extremely fast rise and fall times at all wavelengths. Because the fall time characteristics have no "tail”, the responsivity of the device is independent of modulation frequency up to about 800 MHz.
The detector chip is hermetically-sealed behind a flat glass window in a modified TO-18 package. The useful diameter of the photosensitive surface is 0.5 mm.

FEATUREs
• High Quantum Efficiency 77% Typical at 830 nm
• C30902S and C30921S in Geiger Mode:
   Single-Photon Detection Probability to 50%
   Low Dark-Count Rate at 5% Detection Probability - Typically
   15,000/second at +22°C
   350/second at -25°C
   Count Rates to 2 x 106/second
• Hermetically Sealed Package
• Low Noise at Room Temperature
   C30902E, C30921E - 2.3 x 10-13 A/Hz1/2
   C30902S, C30921S - 1.1 x 10-13 A/Hz1/2
• High Responsivity - Internal Avalanche Gains in Excess of 150
• Spectral Response Range - (10% Points) 400 to 1000 nm
• Time Response - Typically 0.5 ns
• Wide Operating Temperature Range - -40°C to +70°C