General description
N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology.
FEATUREs
◾ Very low on-state resistance
◾ Q101 compliant
◾ 175 °C rated
◾ Standard level compatible
APPLICATIONs
◾ Automotive systems
◾ General purpose power switching
◾ Motors, lamps and solenoids
◾ 12 V and 24 V loads