datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  ON Semiconductor  >>> BUD42D PDF

BUD42D(2011) Даташит - ON Semiconductor

BUD42D image

Номер в каталоге
BUD42D

Other PDF
  2003   lastest PDF  

PDF
DOWNLOAD     

page
12 Pages

File Size
175.4 kB

производитель
ON-Semiconductor
ON Semiconductor ON-Semiconductor

High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability

The BUD42D is a state−of−the−art bipolar transistor. Tight dynamic characteristics and lot to lot minimum spread make it ideally suitable for light ballast applications.


FEATUREs
• Free−Wheeling Diode Built−In
• Flat DC Current Gain
• Fast Switching Times and Tight Distribution
• “6 Sigma” Process Providing Tight and Reproducible Parameter
   Spreads
• Epoxy Meets UL 94 V−0 @ 0.125 in
• ESD Ratings: Machine Model, C; >400 V
                         Human Body Model, 3B; >8000 V
• These are Pb−Free Packages

Two Versions
• BUD42D−1: Case 369D for Insertion Mode
• BUD42D, BUD42DT4: Case 369C for Surface Mount Mode


Номер в каталоге
Компоненты Описание
PDF
производитель
High Speed, High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability
ON Semiconductor
High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network
ON Semiconductor
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
ON Semiconductor
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
ON Semiconductor
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
Motorola => Freescale
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
Motorola => Freescale
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
Motorola => Freescale
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network
ON Semiconductor
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
Motorola => Freescale
High Speed, High Gain Bipolar NPN Power Transistor ( Rev : 2010 )
ON Semiconductor

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]