[First Silicon]

Bi-Directional Triode Thyristor

Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required.

FEATUREs
• Blocking Voltage to 600 V
• On-State Current Rating of 6A RMS at 100℃
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt-1500V/us minimum at 125℃
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt- 4.0A/ms minimum at 125℃
• Internally Isolated (2500VRMS)
• These are Pb-Free Devices