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BS616UV4010BC-10 Даташит - Brilliance Semiconductor

BS616UV4010 image

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BS616UV4010BC-10

Компоненты Описание

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10 Pages

File Size
211.3 kB

производитель
BSI
Brilliance Semiconductor BSI

DESCRIPTION
The BS616UV4010 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.


FEATURES
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
    Vcc = 2.0V C-grade: 15mA (Max.) operating current
                       I-grade: 20mA (Max.) operating current
                       0.20uA (Typ.) CMOS standby current
    Vcc = 3.0V C-grade: 20mA (Max.) operating current
                       I-grade: 25mA (Max.) operating current
                       0.25uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc = 2.0V
    -10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin

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Номер в каталоге
Компоненты Описание
PDF
производитель
Ultra Low Power 256k x 16 CMOS SRAM ( Rev : 2001 )
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Ultra Low Power 256k x 16 CMOS SRAM
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256K X 16 BIT LOW VOLTAGE CMOS SRAM ( Rev : 2007 )
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256K X 16 BIT LOW VOLTAGE CMOS SRAM
AMIC Technology
256K X 16 BIT LOW VOLTAGE CMOS SRAM ( Rev : 2002 )
AMIC Technology
256K X 16 BIT LOW VOLTAGE CMOS SRAM
AMIC Technology
256K X 16 BIT LOW VOLTAGE CMOS SRAM
AMIC Technology

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