DESCRIPTION
The BS616UV2011 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 1.8V to 3.6V supply voltage.

FEATURES
• Ultra low operation voltage : 1.8 ~ 3.6V
• Ultra low power consumption :
    Vcc = 2.0 V C-grade: 15mA (Max.) operating current
                        I-grade: 20mA (Max.) operating current
                        0.08uA (Typ.) CMOS standby current
    Vcc = 3.0 V C-grade: 20mA (Max.) operating current
                        I -grade: 25mA (Max.) operating current
                        0.1uA (Typ.) CMOS standby current
• High speed access time :
    -70 70ns (Max.) at Vcc = 2.0V
    -10 100ns (Max.) at Vcc = 2.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin