DESCRIPTION
The BS616LV8018 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits and operates from a range of 4.5V to 5.5V supply voltage.
Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 8.0uA at 5V/25oC and maximum access time of 55ns at 5.0V/85°C.

FEATURES
• Vcc operation voltage : 4.5~5.5V
• Very low power consumption :
    Vcc = 5.0V C-grade: 75mA (@55ns) operating current
                       I -grade: 76mA (@55ns) operating current
                       C-grade: 60mA (@70ns) operating current
                       I -grade: 61mA (@70ns) operating current
                       8.0uA (Typ.) CMOS standby current
• High speed access time :
    -55
    -70
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE2,CE1 and OE options
• I/O Configuration x8/x16 selectable by LB and UB pin