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BR93LC66FV Даташит - ROHM Semiconductor

BR93LC66 image

Номер в каталоге
BR93LC66FV

Компоненты Описание

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12 Pages

File Size
92.3 kB

производитель
ROHM
ROHM Semiconductor ROHM

Overview
The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it.


FEATUREs
• Low power CMOS Technology
• 256 × 16 bit configuration
• 2.7V to 5.5V operation
• Low power dissipation
    – 3mA (max.) active current: 5V
    – 5µA (max.) standby current: 5V
• Auto increment for efficient data bump
• Automatic erase-before-write
• Hardware and software write protection
    – Default to write-disable state at power up
    – Software instructions for write-enable / disable
    – Vcc lockout inadvertent write protection
• 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages
• Device status signal during write cycle
• TTL compatible Input / Output
• 100,000 ERASE / write cycles
• 10 years Data Retention

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Номер в каталоге
Компоненты Описание
PDF
производитель
1,024/2,048/4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM
Integrated Silicon Solution
4096-BIT SERIAL ELECTRICALLY ERASABLE PROM
Integrated Silicon Solution
2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM
Integrated Silicon Solution
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
Integrated Silicon Solution
2,048-Bit Serial Electrically Erasable PROM
ROHM Semiconductor
1,024-Bit Serial Electrically Erasable PROM
ROHM Semiconductor
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
Integrated Silicon Solution
1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM
Integrated Silicon Solution
1,024-Bit Serial Electrically Erasable PROM
ROHM Semiconductor
8K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
Integrated Silicon Solution

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