General description
260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.

FEATUREs and benefits
■ Excellent ruggedness
■ High-efficiency
■ Low Rth providing excellent thermal stability
■ Designed for broadband operation (1805 MHz to 1880 MHz)
■ Asymmetric design to achieve optimum efficiency across the band
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent digital pre-distortion capability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)

APPLICATIONs
■ RF power amplifiers for W-CDMA base stations and GSM multi carrier applications in
   the 1805 MHz to 1880 MHz frequency range