General description
NPN silicon germanium RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

The BFU910F is suitable for small signal applications up to 20 GHz.

FEATUREs and benefits
■ Low noise high gain microwave transistor
■ Minimum noise figure (NFmin) = 0.65 dB at 12 GHz
■ Maximum stable gain 14.2 dB at 12 GHz
■ 90 GHz fT SiGe technology

APPLICATIONs
■ Ku band DBS Low-Noise blocks