NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF transistor
• Extremly small and flat leadless package,
   height 0.32 mm, ideal for modules
• Provides outstanding performance for
   wireless applications up to 10 GHz
• Ideal for WLAN applications,
   including routers and access points
• Based on Infineons reliable high volume
   SiGe:C technology
• Outstanding noise figure NFmin 0.5 dB at 1.8 GHz
   Outstanding noise figure NFmin 0.8 dB at 6 GHz
• Accurate SPICE GP model enables effective
   design in process
• High maximum stable and available gain
   Gms = 24.5 dB at 1.8 GHz, Gma = 15 dB at 6 GHz
• Pb-free (RoHS compliant) package