Product Brief
The BFP740FESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT) in a thin, small, flat, 4-pin dual emitter plastic package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications.
The BFP740FESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.2 V.

FEATUREs
• Robust high performance low noise amplifier based on
   Infineon´s reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.6 dB minimum noise figure typical at 2.4 GHz,
   0.8 dB at 5.5 GHz, 6 mA
• 26 dB maximum gain (Gma, Gms) typical at 2.4 GHz,
   20.5 dB at 5.5 GHz, 25 mA
• 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
• Accurate SPICE GP model available to enable effective
   design in process (see chapter 6)
• Thin, small, flat, Pb- and halogen free (RoHS compliant) package with visible leads

APPLICATIONs
As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier