DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343 package.

FEATURES
• High efficiency
• Small size discrete power amplifier
• 900 MHz and 1.9 GHz operating areas
• Gold metallization ensures excellent reliability.

APPLICATIONS
• Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.