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BDY25 Даташит - Inchange Semiconductor

BDY25 image

Номер в каталоге
BDY25

Компоненты Описание

Other PDF
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PDF
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page
2 Pages

File Size
59.1 kB

производитель
Iscsemi
Inchange Semiconductor Iscsemi

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= 140V(Min.)
• Collector-Emitter Saturation Voltage-
   : VCE(sat)= 0.6V(Max)@ IC = 2A
• High Switching Speed


APPLICATIONS
• Designed for LF signal powe amplifier applications.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon NPN Power Transistor
Inchange Semiconductor
Silicon NPN Power Transistor ( Rev : V2 )
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Silicon NPN Power Transistor
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Silicon NPN Power Transistor
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New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
New Jersey Semiconductor
Silicon NPN Power Transistor
Inchange Semiconductor

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