BD744B Даташит - New Jersey Semiconductor
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BD744B
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New Jersey Semiconductor
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
• Collector Power Dissipation-
: PC= 90W@ IC= 25℃
• 15A Continuous Collector Current
• Complement to Type BD743B
• Designed for use in general purpose power amplifier and
switching applications.
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