BD649 Даташит - Inchange Semiconductor
Номер в каталоге
BD649
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DESCRIPTION
• Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min)
• High DC Current Gain : hFE= 750(Min) @IC= 3A
• Low Saturation Voltage
• Complement to Type BD650
APPLICATIONS
• Designed for use as complementary AF push-pull output stage applications
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