BD314 Даташит - New Jersey Semiconductor
Номер в каталоге
BD314
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2 Pages
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New Jersey Semiconductor
DESCRIPTION
• Excellent Safe Operating Area
• DC Current Gain-hFE= 25(Min.)@IC = -4A
• Collector-Emitter Saturation Voltage- : VCE(sat)= -1.0 V(Max)@ IC = -5A
• Complement to Type BD313
APPLICATIONS
• Designed for high quality amplifiers operating up to 60 watts into 4 ohm load.
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