Silicon NPN Power Transistor

DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC= 4A
·Collector-Emitter Saturation Voltage-: VCE(sat)= 1.0 V(Max)@ IC= 5A
·Complement to Type BD314

APPLICATIONS
·Designed for high quality amplifiers operating up to 60 watts   into 4 ohm load.