производитель
SUNMATE electronic Co., LTD
Features
● For general purpose applications
● This diodes features very low turn-on voltage
and fast switching. This devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
● Metal silicon schottky barrier device which is protected
by a PN junction guard ring. The low forward voltage
drop and fast switching make it ideal for protection of
MOS devices,steering,biasing and coupling diodes for
fast switching and low logic level applications
Mechanical Data
● Case:JEDEC DO--35,glass case
● Polarity: Color band denotes cathode end
● Weight: Approx. 0.13 gram
Номер в каталоге
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