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B601 Даташит - New Jersey Semiconductor

2SB601 image

Номер в каталоге
B601

Компоненты Описание

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page
2 Pages

File Size
90.8 kB

производитель
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• High DC Current Gain-
   : hFE = 2000(Min)@ lc=-3A
• Collector-Emitter Sustaining Voltage-
   : VCEO(sus)=-100V(Min)
• Low Collector-Emitter Saturation Voltage-
   : VCE(sat) = -1.5V(Max)@lc=-3A


APPLICATIONS
• Designed for use in low-frequency power amplifiers and low-speed switching applications.
• Ideal for use in direct drive from 1C output for magnet drivers such as terminal equipment or cash registers.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor

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