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B1431 Даташит - New Jersey Semiconductor

2SB1431 image

Номер в каталоге
B1431

Компоненты Описание

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page
2 Pages

File Size
89.6 kB

производитель
NJSEMI
New Jersey Semiconductor NJSEMI

DESCRIPTION
• Collector-Emitter Breakdown Voltage-
   : V(BR)CEO= -100V(Min)
• High DC Current Gain-
   : hFE= 2000(Min)@ (VCE= -2V, IC= -3A)
• Low Collector Saturation Voltage-
   : VCE(sat)= -1.5V(Max)@ (lc= -3A, IB= -3mA)


APPLICATIONS
• Designed for low-frequency power amplifiers and low-speed switching applications.


Номер в каталоге
Компоненты Описание
PDF
производитель
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
New Jersey Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor
Silicon PNP Darlington Power Transistor
Inchange Semiconductor

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