Description
The AT49F008A(T) and AT49F8192A(T) are 5-volt, 8-megabit Flash memories organized as 1,048,576 words of 8 bits each or 512K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 90 ns with power dissipation of just 275 mW. When deselected, the CMOS standby current is less than 100 µA.
   
Features
• Single-voltage Operation
    – 5V Read
    – 5V Programming
• Fast Read Access Time – 70 ns
• Internal Erase/Program Control
• Sector Architecture
    – One 8K Word (16K Bytes) Boot Block with Programming Lockout
    – Two 4K Word (8K Bytes) Parameter Blocks
    – One 496K Word (992K Bytes) Main Memory Array Block
• Fast Sector Erase Time – 10 seconds
• Byte-by-byte or Word-by-word Programming – 10 µs Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Low Power Dissipation
    – 50 mA Active Current
    – 100 µA CMOS Standby Current
• Typical 10,000 Write Cycles