Description
The AT49BV/LV4096A is a 3-volt, 4-megabit Flash memory organized as 524,288 words of 8 bits each or 256K words of 16 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 70 ns with power dissipation of just 67 mV at 2.7V read. When deselected, the CMOS standby current is less than 50 µA.

FEATUREs
• Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
• Fast Read Access Time – 70 ns
• Internal Erase/Program Control
• Sector Architecture
    – One 8K Word (16K Bytes) Boot Block with Programming Lockout
    – Two 4K Word (8K Bytes) Parameter Blocks
    – One 240K Word (480K Bytes) Main Memory Array Block
• Fast Sector Erase Time – 10 Seconds
• Byte-by-byte or Word-by-word Programming – 30 µs Typical
• Hardware Data Protection
• Data Polling for End of Program Detection
• Low Power Dissipation
    – 25 mA Active Current
    – 50 µA CMOS Standby Current
• Typical 10,000 Write Cycles