Description
The AT29C432 is a CMOS memory specifically designed for applications requiring both a high density nonvolatile program memory and a smaller nonvolatile data memory. The AT29C432 provides this in the form of a 4 megabit Flash array integrated with a 256K bit full featured E2PROM array on the same device. A unique feature of this device is its concurrent read while writing capability. This provides the host system read access to the Flash program memory during the write cycle time of the E2PROM.

FEATUREs
• ConcurrentFlash™ Memory
    Unique Architecture Allows the Flash Array
    To Be Read During the E2PROM Write Cycle
• 4 Megabit 5-volt Flash
    Configured as a 512K x 8 Memory Array
    120 ns Read Access Time
    Sector Program Operation
        Single Cycle Reprogram (No Erase Necessary)
        2048 Sectors, 256-Bytes Wide
        10 ms Sector Rewrite
    JEDEC Standard Software Data Protection
• 256K bit Full Feature E2PROM
    Configured as a 32K x 8 Memory Array
    Byte or Page (16 bytes) Write Capability
    Write Cycle Time: 10 ms
    JEDEC Standard Software Data Protection
• Pinout Similar to 32-Pin 4 Mb Flash
• Data Memory Endurance: 10,000 cycles