Description
The AT28C16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28C16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable nonvolatile CMOS technology.
The AT28C16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA POLLING of I/O7. Once the end of a write cycle has been detected, a new access for a read or a write can begin.
The CMOS technology offers fast access times of 150 ns at low power dissipation. When the chip is deselected the standby current is less than 100 µA.
Atmel’s 28C16 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of E2PROM are available for device identification or tracking.

FEATUREs
• Fast Read Access Time - 150 ns
• Fast Byte Write - 200 µs or 1 ms
• Self-Timed Byte Write Cycle
   Internal Address and Data Latches
   Internal Control Timer
   Automatic Clear Before Write
• Direct Microprocessor Control
   DATA POLLING
• Low Power
   30 mA Active Current
   100 µA CMOS Standby Current
• High Reliability
   Endurance: 104 or 105 Cycles
   Data Retention: 10 Years
• 5V ± 10% Supply
• CMOS & TTL Compatible Inputs and Outputs
• JEDEC Approved Byte Wide Pinout
• Commercial and Industrial Temperature Ranges