Description
This group of GaAs MMIC SPST FETs are designed for applications up to 6 GHz where high isolation, low loss and low distortion performance is critical, especially radio and cellular telephone switching requirements in which low DC consumption is desired. The chip can be selectively bonded to optimize the low loss or high isolation feature with a non-reflective option.

FEATUREs
■ Multiple Use Options
■ Excellent Intermodulation Products/Temperature Stability
■ 100% On-Wafer DC Testing
■ 100% Visual Inspection of MIL-STD-883 MT 2010