FEATURES
1. 1 channel (Form B) in super miniature design
   The device comes in a super-miniature  SO package measuring (W) 4.4 × (L) 6.3  ×(H) 2.1 mm (W) .173× (L) .248×(H) .083  inch —approx. 25% of the volume and  50% of the footprint size of DIP type PhotoMOS Relays.
2. Low on resistance (Max. 50 Ω) at 400  V for normally-closed type
   has been achieved thanks to the built-in  MOSFET processed by our proprietary  method, DSD (Double-Diffused and Selective Doping) method.
3. Tape and reel
   The device comes standard in a tape and  reel (1,000 pcs./reel) to facilitate automatic insertion machines.
4. Controls low-level analog signals
   PhotoMOS relays feature extremely low  closed-circuit offset voltage to enable  control of low-level analog signals without  distortion.
5. Low-level off state leakage current
   In contrast to the SSR with an off state  leakage current of several milliamps, the  PhotoMOS relay features a very small off  state leakage current of only 100 pA even  at the rated load voltage of 400 V.
6. Low thermal electromotive force  (Approx. 1 µV)

TYPICAL APPLICATIONS
• Telephones
• Measuring instruments
• Computer
• Industrial robots
• High-speed inspection machines