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APTCV90TL12T3G Даташит - Microsemi Corporation

APTCV90TL12T3G image

Номер в каталоге
APTCV90TL12T3G

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page
9 Pages

File Size
236.2 kB

производитель
Microsemi
Microsemi Corporation Microsemi

Features
• Q2, Q3 Trench + Field Stop IGBT 4 Technology
   - Low voltage drop
   - Low leakage current
   - Low switching losses
• Q1, Q4 CoolMOS™
   - Ultra low RDSon
   - Low Miller capacitance
   - Ultra low gate charge
   - Avalanche energy rated
   - Very rugged
• Kelvin emitter for easy drive
• Very low stray inductance
• High level of integration
• Internal thermistor for temperature monitoring


Benefits
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS Compliant


APPLICATION
• Solar converter
• Uninterruptible Power Supplies


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