Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

• Identical Specifications:
   T-MAX™ or TO-264 Package
• Lower Leakage
• Fast Recovery Body Diode
• Faster Switching
• 100% Avalanche Tested