N-Channel Enhancement Mode MOSFET
Features
•-30V/-4.6A ,
RDS(ON)=52mΩ(typ.) @ VGS=-10V
RDS(ON)=80mΩ(typ.) @ VGS=-4.5V
•Super High Dense Cell Design
•Reliable and Rugged
•Lead Free Available (RoHS Compliant)
Applications
•Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems