General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant

FEATUREs
   VDS                      30V
   ID (at VGS=10V)          30A
   RDS(ON) (at VGS=10V)    < 4.5mΩ
   RDS(ON) (at VGS = 4.5V) < 6.8mΩ